Title :
Laser assisted metalorganic chemical vapour deposition of Mg doped GaN on silicon, sapphire and GaAs
Author :
Zuo, H.Y. ; Paterson, Melissa J. ; Goldys, E. ; Tansley, T.L. ; Afifuddin
Author_Institution :
Semicond. Sci. & Technol. Labs., Macquarie Univ., North Ryde, NSW, Australia
Abstract :
Mg doped p-type GaN films intended for UV photodetector applications have been produced by using laser-induced metalorganic chemical vapour deposition at a low temperature of 600°C. The hole mobilities obtained are up to 40 cm2 V-1 s-1 at room temperature without any post growth treatment and rich photoluminescence spectra are typical. Three principal peaks at 2.95 eV, 2.6 eV and 2.2 eV were observed at low temperature with only those at 2.6 and 2.2 eV persisting at room temperature
Keywords :
Hall mobility; III-V semiconductors; MOCVD; X-ray diffraction; gallium compounds; hole density; hole mobility; laser deposition; magnesium; photoluminescence; semiconductor growth; semiconductor thin films; wide band gap semiconductors; 600 C; Al2O3; GaAs; GaN:Mg; Hall effect; Si; UV photodetector applications; XRD; doped p-type films; hole concentration; hole mobilities; hole mobility; laser assisted MOCVD; low temperature; photoluminescence spectra; room temperature; sapphire substrate; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Gallium nitride; Laser theory; Masers; Plasma temperature; Semiconductor lasers; Silicon; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791619
