Title :
Fabrication of depletion- and enhancement-mode GaInP/GaAs /spl delta/-HEMT´s
Author :
Wu, Min-Yuan ; Lour, Wen-Shiung ; Huang, Ge-Li ; Shih, Yu-Min
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Ocean Univ., Keelung, Taiwan
Abstract :
A new HEMT structure was proposed to fabricate both types of device. An additional n-GaAs cap layer was employed to control the device operation model. Accordingly, both depletion- and enhancement-mode HEMTs were simultaneously fabricated on the same chip by selectively removing the cap layer. For a 1×1000 μm2 device, the pinch-off voltage for the depletion mode device is -1.8 V. The maximum applied gate voltage for the enhancement mode one is +1.8 V. The measured output current and transconductance are 260 (200) mA/mm, 175 (150) mS/mm. The measured ft and fmax are 6.3 (6) and 13 (12) GHz for depletion and enhancement-mode devices, respectively
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device measurement; -1.8 V; 1.8 V; 12 to 13 GHz; 150 mS/mm; 175 mS/mm; 6 to 6.3 GHz; GaInP-GaAs; GaInP/GaAs /spl delta/-HEMT; HEMT structure; depletion-mode; enhancement-mode; fabrication; gate voltage; n-GaAs cap layer; output current; pinch-off voltage; transconductance; Current measurement; Etching; Fabrication; Gallium arsenide; HEMTs; Insulation; MODFETs; Semiconductor device measurement; Transconductance; Voltage;
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA, Australia
Print_ISBN :
0-7803-4513-4
DOI :
10.1109/COMMAD.1998.791624
