DocumentCode :
3138687
Title :
Energy efficient Phase Change Memory based main memory for future high performance systems
Author :
Bheda, Rishiraj A. ; Poovey, Jason A. ; Beu, Jesse G. ; Conte, Thomas M.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear :
2011
fDate :
25-28 July 2011
Firstpage :
1
Lastpage :
8
Abstract :
Phase Change Memory (PCM) has recently attracted a lot of attention as a scalable alternative to DRAM for main memory systems. As the need for high-density memory increases, DRAM has proven to be less attractive from the point of view of scaling and energy consumption. PCM-only memories suffer from latency issues, high write energy, and the problem of limited write endurance. Research in this domain has focused mainly on using various hybrid memory configurations to address these shortcomings. A commodity DRAM module as a cache for PCM memory has emerged as a potential solution. But this method requires use of a separate memory controller and is unable to achieve better performance than a DRAM-only based memory at low energy. We propose a PCM based main memory system design using a small, embedded DRAM (eDRAM) cache to replace the row buffers in the PCM memory chip. This reduces the high latencies of PCM and the energy consumption of the main memory system. Our methodology also eliminates the need for separate memory controllers. Through simulation results, we show competitive performance by reducing average memory access time of a slow PCM based memory and significant energy reductions against a DDR3 commodity DRAM memory system of similar storage size. Our proposed system is highly energy efficient and provides 35.02%improvement in EDP over a DRAM-only system. Our system consumes less energy than the state-of-the-art PCM hybrid system using a commodity DRAM cache.
Keywords :
DRAM chips; cache storage; energy consumption; phase change memories; power aware computing; DDR3 commodity DRAM memory system; cache; embedded DRAM; energy consumption; energy efficient phase change memory; future high performance systems; latency issues; main memory; write endurance; write energy; Energy efficiency; Memory management; Phase change materials; Random access memory; Resistance; Time factors; DRAM; Energy; Memory Controller; PCM;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Green Computing Conference and Workshops (IGCC), 2011 International
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4577-1222-7
Type :
conf
DOI :
10.1109/IGCC.2011.6008569
Filename :
6008569
Link To Document :
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