DocumentCode
3139622
Title
MOCVD growth and properties of thin AlxGa1-xN layers on GaN
Author
Parish, G. ; Keller, S. ; Fini, P.T. ; Vetury, R. ; Chen, C.H. ; DenBaars, S.P. ; Mishra, U.K. ; Wu, Y.F.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fYear
1999
fDate
1999
Firstpage
478
Lastpage
481
Abstract
The effect of growth conditions on the morphological and electrical properties of thin AlGaN layers on GaN has been studied. High two-dimensional-electron-gas (2DEG) mobilities of up to 1400 cm2 /Vs were obtained. The morphological and electrical (2DEG) quality strongly depended on the aluminium content. Also, growth on Laterally Epitaxially Overgrown GaN was investigated
Keywords
III-V semiconductors; MOCVD coatings; aluminium compounds; crystal morphology; electron mobility; gallium arsenide; semiconductor epitaxial layers; semiconductor growth; two-dimensional electron gas; vapour phase epitaxial growth; wide band gap semiconductors; 2DEG; AlGaN; GaN; MOCVD growth; electrical properties; electron mobilities; morphological properties; thin AlxGa1-xN layers on GaN; two-dimensional-electron-gas; Aluminum gallium nitride; Atomic force microscopy; Gallium nitride; Inductors; Instruments; Low earth orbit satellites; MOCVD; Surface morphology; Temperature dependence; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location
Perth, WA
Print_ISBN
0-7803-4513-4
Type
conf
DOI
10.1109/COMMAD.1998.791694
Filename
791694
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