DocumentCode
3139656
Title
A novel Channel Boost Capacitance (CBC) cell technology with low program disturbance suitable for fast programming 4 Gbit NAND flash memories
Author
Satoh, S. ; Shimizu, K. ; Tanaka, T. ; Arai, F. ; Aritome, Seiichi ; Shirota, R.
Author_Institution
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
fYear
1998
fDate
9-11 June 1998
Firstpage
108
Lastpage
109
Abstract
This paper describes a novel Channel Boost Capacitance (CBC) cell technology suitable for highly scaled and fast-programming NAND flash memories. The CBC cell realizes a very high channel boost ratio in self-boosted programming without additional gate control, and drastically improves program disturbance with decreasing design rule, especially less than 0.2 /spl mu/m-rule. This memory cell is essential for realizing highly scaled, and fast-progamming NAND flash memories of 4 Gbit and beyond.
Keywords
NAND circuits; capacitance; flash memories; 0.2 micron; 4 Gbit; Channel Boost Capacitance cell technology; NAND flash memory; channel boost ratio; design rule; fast programming; program disturbance; scaling; self-boosted programming; Birth disorders; Capacitance; Chromium; PROM; Paper technology; Stress; Venus; Very large scale integration; Virtual manufacturing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-4770-6
Type
conf
DOI
10.1109/VLSIT.1998.689219
Filename
689219
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