DocumentCode :
3139834
Title :
Accurate modelling of absorption and refractive index in a GaAs/AlGaAs quantum well
Author :
Nott, G.J. ; Goldys, E.M.
Author_Institution :
Semicond. Sci. & Technol. Lab., Macquarie Univ., North Ryde, NSW, Australia
fYear :
1999
fDate :
1999
Firstpage :
526
Lastpage :
529
Abstract :
Using the real and imaginary dielectric constants of a GaAs/AlGaAs quantum well, both the absorption and refractive index of the structure were calculated. The imaginary dielectric constant was obtained by finding the contribution from each critical point in the density of states. The Kramers-Kronig transform of each contribution gave the corresponding real dielectric constant and these contributions were summed to give the material´s total real dielectric constant. Absorption was found from the imaginary dielectric constant and fitted to experimental spectra. All contributions from confined and continuum transitions were considered in the subsequent calculation of refractive index with the resulting spectrum being comparable to published data
Keywords :
III-V semiconductors; Kramers-Kronig relations; aluminium compounds; gallium arsenide; permittivity; refractive index; semiconductor quantum wells; GaAs-AlGaAs; GaAs/AlGaAs quantum well; Kramers-Kronig transform; absorption; dielectric constants; refractive index; Absorption; Charge carrier processes; Detectors; Dielectric constant; Effective mass; Excitons; Fabry-Perot; Gallium arsenide; Laboratories; Refractive index;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials Devices, 1998. Proceedings. 1998 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
0-7803-4513-4
Type :
conf
DOI :
10.1109/COMMAD.1998.791709
Filename :
791709
Link To Document :
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