Title :
A load-insensitive quad-band GSM/EDGE SiGeC-bipolar power amplifier with a highly efficient low power mode
Author :
Bakalski, Winfried ; Zannoth, Markus ; Asam, Michael ; Thomann, Wolfgang ; Kapfelsperger, Boris ; Pfann, Peter ; Berkner, Jö Rg ; Hepp, Christoph ; Steltenpohl, Anton ; Sterreicher, Wilfried Ö ; Rampf, Erwin
Author_Institution :
Infineon Technol. AG, Neubiberg
Abstract :
A load-insensitive fully-integrated quad- band GSM/EDGE radio frequency power amplifier for 824-915 MHz and 1710-1910 MHz has been realized in a 0.35-mum SiGeC-Bipolar technology. The chip integrates a low- and high-band 3-stage power amplifier including a bias-control circuit for power control, band select and mode as well as ramping dependent quiescent currents. The load-insensitive balanced PA architecture delivers for an adjusted output power of 34.5 dBm for all phases of a 3:1 VSWR a low deviation only 1.3 dB. At 3.5 V a saturated output power of 36.7 dBm is achieved at 870 MHz and 34 dBm at 1710 MHz. The respective peak PAE is 52% for low band and 42 % for high-band. The PA features a unique switched low power mode that involves disabling one half of each PA.
Keywords :
Ge-Si alloys; radiofrequency amplifiers; PA architecture; SiGeC; bias-control circuit; frequency 1710 MHz to 1910 MHz; frequency 824 MHz to 915 MHz; quad- band GSM/EDGE radio frequency power amplifier; quad-band GSM/EDGE SiGeC-bipolar power amplifier; voltage 3.5 V; Circuits; GSM; High power amplifiers; Inductors; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Resistors; Switches; couplers; power amplifiers; transformers;
Conference_Titel :
Radio and Wireless Symposium, 2008 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4244-1462-8
Electronic_ISBN :
978-1-4244-1463-5
DOI :
10.1109/RWS.2008.4463464