• DocumentCode
    3140280
  • Title

    Microcrystalline silicon gauges on flexible substrates for high deformations with high spatial resolution

  • Author

    Kervran, Y. ; Janfaoui, S. ; De Sagazan, Olivier ; Crand, S. ; Coulon, N. ; Gauthier, J. ; Mohammed-Brahim, T.

  • Author_Institution
    DMM, Univ. RENNES I, Rennes, France
  • fYear
    2013
  • fDate
    3-5 Dec. 2013
  • Firstpage
    603
  • Lastpage
    607
  • Abstract
    Microcrystalline silicon films are used as piezoresistive material to fabricate resistor and transistor strain gauges. Very small gauges are fabricated allowing the possibility to measure high deformations with both high sensitivity and spatial resolution. Resistor gauges with 5 × 125 μm2 smallest size showed a gauge factor of -24 when applying high strains (0.55%, radius of curvature 5 mm). Field effect thin film transistor (TFT) gauges showed a gauge factor of -85 but under slightly lower strains (0.45%, radius of curvature 10 mm). This value is close to strain gauges made of single crystalline silicon (~100, regarding the absolute value), but which are not flexible and then cannot support high deformations. The more complex technological process of TFT gauges could reserve their use to the measurement of low deformations when high resolution is required, while resistor gauges could be chosen when focusing on a mix between size and sensitivity in a large range of deformations.
  • Keywords
    elemental semiconductors; field effect transistors; mechanical variables measurement; microfabrication; microsensors; piezoresistive devices; silicon; thin film resistors; thin film sensors; thin film transistors; Si; TFT gauges; deformation measurement; field effect thin film transistor; flexible substrate; gauge factor; microcrystalline silicon film; microcrystalline silicon gauge; piezoresistive material; resistor gauge fabrication; spatial resolution; transistor strain gauge fabrication; Films; Resistors; Sensors; Silicon; Strain; Substrates; Thin film transistors; Microcrystalline silicon; flexible substrate; resistor; spatial resolution; strain gauge; transistor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensing Technology (ICST), 2013 Seventh International Conference on
  • Conference_Location
    Wellington
  • ISSN
    2156-8065
  • Print_ISBN
    978-1-4673-5220-8
  • Type

    conf

  • DOI
    10.1109/ICSensT.2013.6727724
  • Filename
    6727724