Thermally insulated structures for IR bolometers, made of polycrystalline silicon germanium alloys

Author

Sedky, Sherif ; Fiorini, Paolo ; Caymax, Matty ; Verbist, Agnes ; Baert, Chris

Author_Institution

IMEC, Leuven, Belgium

Volume

1

fYear

1997

fDate

16-19 Jun 1997

Firstpage

237

Abstract

This paper reports the first realization of surface micromachined, suspended structures, made of poly crystalline silicon germanium alloys (poly Si_0.7Ge_0.3). The electrical and mechanical properties of this material are presented. The effect of the deposition conditions on the above properties is also investigated. The complete process for realizing the suspended structure is described and the possibility of reducing the process temperature down to 650°C is demonstrated

Keywords

Ge-Si alloys; annealing; bolometers; electrical resistivity; infrared detectors; micromachining; semiconductor materials; stress relaxation; thermal conductivity; thermal insulating materials; 650 C; IR bolometers; Si_0.7Ge_0.3; annealing temperature; deposition conditions; electrical properties; mechanical properties; polycrystalline Si_0.7Ge_0.3; process temperature; resistivity; stress relaxation; surface micromachined suspended structures; thermal conductivity; thermally insulated structures; Bolometers; Crystalline materials; Crystallization; Germanium alloys; Germanium silicon alloys; Insulation; Mechanical factors; Silicon alloys; Silicon germanium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.613627

Filename

613627