Title :
Production data on 0.55 eV InGaAs thermophotovoltaic cells
Author :
Wojtczuk, S. ; Colter, P. ; Charache, G. ; Campbell, B.
Author_Institution :
Spire Corp., Bedford, MA, USA
Abstract :
Low bandgap 0.55 eV (2.25 μm cutoff wavelength) indium gallium arsenide (In0.72Ga0.28As) thermophotovoltaic (TPV) cells use much more of the long wavelength energy emitted from low temperature (<1200°C) thermal sources than either Si or GaSb cells. Data are presented on a statistically significant number (2500) of these TPV cells, indicating the performance obtainable in large numbers of cells. This data should be useful in the design and modeling of TPV system performance. At 1.2 A/cm2 short-circuit current, an average open-circuit voltage of 283 mV is obtained with a 60% fill factor. The peak external quantum efficiency for uncoated cells is 65% and is over 50% from 1.1 to 2.2 μm. Internal quantum efficiency is over 76% in this range assuming an estimated 34% reflectance loss
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photovoltaic cells; reflectivity; semiconductor materials; short-circuit currents; solar cells; 0.55 eV; 283 mV; 50 to 76 percent; In0.72Ga0.28As; In0.72Ga0.28As thermophotovoltaic cells; InGaAs thermophotovoltaic cells; average open-circuit voltage; fill factor; low bandgap; low temperature thermal sources; peak external quantum efficiency; performance; production data; reflectance loss; short-circuit current; uncoated cells; Indium gallium arsenide; Indium phosphide; Optical filters; Photonic band gap; Photovoltaic cells; Production; Reflectivity; System performance; Temperature; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563950
