A novel semiconductor NO gas sensor operating at room temperature

Author

Wenyi, Zhang ; Uchida, Hidekazu ; Katsube, Teruaki ; Nakatsubo, Toshiya ; Nishioka, Yasushiro

Author_Institution

Fac. of Eng., Saitama Univ., Urawa, Japan

Volume

1

fYear

1997

fDate

16-19 Jun 1997

Firstpage

569

Abstract

A novel NO gas sensor for room temperature operation is proposed and its response mechanism is discussed. It is based on a Si diode structure consisting of Pd-Pt/WO₃/p-Si/Al. The WO₃ film is deposited by reactive sputtering and crystallized by thermal annealing. The sensor shows sensitivity to NO gas at a concentration of less than 50 ppm at room temperature. The response time is less than 1 min and good reversibility is observed without base level current shift. The possibility of integration of the NO gas sensor on a Si LSI chip is pointed out

Keywords

air pollution measurement; annealing; gas sensors; semiconductor growth; semiconductor materials; semiconductor thin films; sputter deposition; tungsten compounds; 1 min; I-V characteristics; NO; NO gas sensor; Pd-Pt/WO₃/p-Si/Al structure; PdPt-WO₃-Si-Al; Si LSI chip; Si diode structure; WO₃ film; air pollution; crystallization; monolithic integration; reactive sputtering; response mechanism; response time; reversibility; room temperature operation; thermal annealing; Annealing; Atmospheric measurements; Crystallization; Current measurement; Gas detectors; Semiconductor films; Sensor phenomena and characterization; Sputtering; Temperature sensors; Thin film sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on

Conference_Location

Chicago, IL

Print_ISBN

0-7803-3829-4

Type

conf

DOI

10.1109/SENSOR.1997.613714

Filename

613714