Title :
A novel semiconductor NO gas sensor operating at room temperature
Author :
Wenyi, Zhang ; Uchida, Hidekazu ; Katsube, Teruaki ; Nakatsubo, Toshiya ; Nishioka, Yasushiro
Author_Institution :
Fac. of Eng., Saitama Univ., Urawa, Japan
Abstract :
A novel NO gas sensor for room temperature operation is proposed and its response mechanism is discussed. It is based on a Si diode structure consisting of Pd-Pt/WO3/p-Si/Al. The WO3 film is deposited by reactive sputtering and crystallized by thermal annealing. The sensor shows sensitivity to NO gas at a concentration of less than 50 ppm at room temperature. The response time is less than 1 min and good reversibility is observed without base level current shift. The possibility of integration of the NO gas sensor on a Si LSI chip is pointed out
Keywords :
air pollution measurement; annealing; gas sensors; semiconductor growth; semiconductor materials; semiconductor thin films; sputter deposition; tungsten compounds; 1 min; I-V characteristics; NO; NO gas sensor; Pd-Pt/WO3/p-Si/Al structure; PdPt-WO3-Si-Al; Si LSI chip; Si diode structure; WO3 film; air pollution; crystallization; monolithic integration; reactive sputtering; response mechanism; response time; reversibility; room temperature operation; thermal annealing; Annealing; Atmospheric measurements; Crystallization; Current measurement; Gas detectors; Semiconductor films; Sensor phenomena and characterization; Sputtering; Temperature sensors; Thin film sensors;
Conference_Titel :
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
0-7803-3829-4
DOI :
10.1109/SENSOR.1997.613714
