DocumentCode :
3141852
Title :
Characteristics of the Power Electronics Equipments applying the SiC power devices
Author :
Matsumoto, Yasushi ; Yamada, Ryuji ; Kondo, Yasushi ; Ikeda, Yoshinari ; Kimura, Hiroshi
Author_Institution :
Fuji Electric Co., Ltd. Corporate R&D Headquarters Hino, Tokyo, Japan
fYear :
2012
fDate :
3-5 July 2012
Firstpage :
1
Lastpage :
5
Abstract :
Power Electronics Equipments applying superior characteristics Silicon Carbide (SiC) power semiconductors have been researching and developing. Applying the hybrid modules using Si-IGBT and SiC-SBD (Schottky Barrier Diode) to the motor drive inverter enables reduction of the loss 25% of the inverter part. Moreover applying the All-SiC modules using SiC-MOSFET and SiC-SBD to the solar inverter enables to be the efficiency of the main circuit unit 99%, and to be the volume of the equipment 25% to conventional one.
Keywords :
MOSFET; Motor Drive Inverter; SBD; SiC; Solar Inverter;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Engineering and Renewable Energy (ICPERE), 2012 International Conference on
Conference_Location :
Bali, Indonesia
Print_ISBN :
978-1-4673-2468-7
Electronic_ISBN :
978-1-4673-2469-4
Type :
conf
DOI :
10.1109/ICPERE.2012.6287230
Filename :
6287230
Link To Document :
بازگشت