Title :
A 6–18 GHz 5-Bit active phase shifter
Author :
Koh, K. ; Rebeiz, Gabriel
Author_Institution :
Intel Corporation, Hillsboro, Oregon, USA
Abstract :
This paper presents a 6-18 GHz active 5-bit phase shifter in 0.18-um SiGe BiCMOS technology based on a phase interpolation technique. An L-C resonance-based quadrature all-pass filter generates the I/Q reference signal with high I/Q accuracy over a wide bandwidth, and integrated current-mode DACs control the I/Q amplitudes to achieve 5-bit phase resolution. The phase shifter shows 19.5 dB of power gain with 1.1 dB of RMS gain variation for all 5-bit phase states at 12 GHz, and the 3-dB gain bandwidth is 7.5–15.2 GHz. The measured RMS phase error is 3 deg at 6.4–10.2 GHz and 5.6 deg at 6–18 GHz achieving greater than 5-bit accuracy. Within the 3-dB gain bandwidth, the NF ranges from 4 to 5.7 dB and the NF variation is +/− 0.12 dB for all phase states. The total current consumption is 18.7 mA (phase shifter core: ∼3 mA) from a 3.3 V supply voltage and overall chip size is 1.2×0.75 mm^2 (phase shifter core: 0.45×0.35 mm^2).
Keywords :
Bandwidth; BiCMOS integrated circuits; Filters; Gain; Germanium silicon alloys; Interpolation; Noise measurement; Phase shifters; Resonance; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5517540