Transient Thermal Analysis of active device (FETs) for high-power applications

In this paper, effects of Transient Thermal Analysis for active devices (including GaAsFET, GaNHFET and LDMOSFET) under high power pulse in the communication systems are investigated. By using hybrid finite element methods, for example, the element-by-element finite element method (EBE-FEM) and the preconditioned conjugate gradient (PCG) technique, the thermal responses of the GaAsFET, GaNHFET, and LDMOS are extracted. These will be useful for further analyze the thermal effects so as to prevent on-chip device breakdown by the Impact of Intentional Electromagnetic Interference (IEMI).