Title :
Characteristics of the power electronics equipments applying the SiC power devices
Author :
Mine, Hironori ; Matsumoto, Yasushi ; Yamada, Ryuji ; Mino, Kazuaki ; Kimura, Hiroshi ; Kondo, Yasushi ; Ikeda, Yoshinari
Author_Institution :
Corp. R&D Headquarters, Fuji Electr. Co., Ltd., Tokyo, Japan
Abstract :
Power Electronics Equipments applying superior characteristics Silicon Carbide (SiC) power semiconductors have been researching and developing. Applying the hybrid modules using Si-IGBT and SiC-SBD (Schottky Barrier Diode) to the motor drive inverter enables reduction of the loss 25% of the inverter part. Moreover applying the All-SiC modules using SiC-MOSFET and SiC-SBD to the solar inverter enables to be the efficiency of the main circuit unit 99%, and to be the volume of the equipment 25% to conventional one.
Keywords :
MOSFET circuits; Schottky diodes; insulated gate bipolar transistors; invertors; motor drives; power electronics; power semiconductor devices; silicon; silicon compounds; wide band gap semiconductors; IGBT; MOSFET; SBD; Schottky barrier diode; Si; SiC; hybrid modules; motor drive inverter; power device; power electronic equipment; power semiconductor; Insulated gate bipolar transistors; Inverters; Motor drives; Silicon; Silicon carbide; Temperature; MOSFET; Motor Drive Inverter; SBD; SiC; Solar Inverter;
Conference_Titel :
Power Engineering and Renewable Energy (ICPERE), 2012 International Conference on
Conference_Location :
Bali
Print_ISBN :
978-1-4673-2468-7
Electronic_ISBN :
978-1-4673-2469-4
DOI :
10.1109/ICPERE.2012.6287252
