DocumentCode :
3142376
Title :
Analysis and Design of a 10 Gbps Transimpedance Amplifier using 0.18μm CMOS technology
Author :
Bespalko, Ryan ; Frank, Brian
Author_Institution :
Dept. of Electr. & Comput. Eng., Queen´´s Univ., Kingston, Ont.
fYear :
2006
fDate :
7-10 May 2006
Firstpage :
2156
Lastpage :
2159
Abstract :
This paper examines the design of a 10 Gbps transimpedance amplifier (TIA) in 0.18 mum CMOS technology. In order to compensate for the high parasitic capacitances in the CMOS process, this design uses a shunt and series inductive peaking technique to achieve the required transimpedance bandwidth. A noise analysis on the input stage of the TIA is shown. This noise model is used to determine the optimum device size required to minimize the average input referred noise current. Simulation results for the TIA are presented showing a transimpedance gain of approximately 52 dBΩ. The simulated average input referred noise current of the differential TIA is shown to be approximately 27 pA/√radicHz
Keywords :
CMOS integrated circuits; differential amplifiers; 0.18 micron; 10 Gbits/s; CMOS technology; TIA; noise analysis; series inductive peaking technique; shunt inductive peaking technique; transimpedance amplifier; Bandwidth; CMOS process; CMOS technology; Circuit noise; Feedback; Optical amplifiers; Optical noise; Parasitic capacitance; Resistors; Shunt (electrical); CMOS; Noise Analysis; Optical communications; Transimpedance Amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering, 2006. CCECE '06. Canadian Conference on
Conference_Location :
Ottawa, Ont.
Print_ISBN :
1-4244-0038-4
Electronic_ISBN :
1-4244-0038-4
Type :
conf
DOI :
10.1109/CCECE.2006.277643
Filename :
4054960
Link To Document :
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