Electromigration of submicron Damascene copper interconnects

Author

Changsup Ryu ; Kee-Won Kwon ; Loke, A.L.S. ; Dubin, V.M. ; Kavari, R.A. ; Ray, G.W. ; Wong, S.S.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

1998

fDate

9-11 June 1998

Firstpage

156

Lastpage

157

Abstract

This paper compares the microstructure and reliability of submicron Damascene CVD and electroplated Cu interconnects. For CVD Cu, the electromigration lifetime degrades in the deep submicron range due to fine grains constrained by the deposition process. However, electroplated Cu has relatively large grains in trenches, resulting in no degradation of reliability in the deep submicron range. The electromigration performance of electroplated Cu is superior to that of CVD Cu especially for deep submicron Damascene interconnects.

Keywords

CVD coatings; VLSI; copper; electromigration; electroplated coatings; grain size; integrated circuit reliability; CVD Cu interconnects; Cu; deep submicron range; deposition process; electromigration lifetime degradation; electroplated Cu interconnects; fine grains; large grains; microstructure; reliability; submicron Damascene Cu interconnects; Annealing; Artificial intelligence; Conductivity; Copper alloys; Degradation; Electromigration; Grain size; Microstructure; Testing; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-4770-6

Type

conf

DOI

10.1109/VLSIT.1998.689238

Filename

689238