DocumentCode :
3143921
Title :
A radically different model for NBTI in nitrided oxide MOSFETs
Author :
Lenahan, P.M.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
fYear :
2009
fDate :
18-22 Oct. 2009
Firstpage :
90
Lastpage :
92
Abstract :
This paper discusses a model of NBTI which does not involve hydrogen diffusion or hydrogen bond breaking or hydrogen bond generation. (The model is almost completely different from the reaction diffusion models which dominate the current NBTI literature.) The proposed model is consistent with recent magnetic resonance measurements as well as many NBTI observations in the literature. The model is relevant to nitrided oxide pMOS devices. The model accounts for the observed NBTI power law response, provides a reasonably accurate prediction for the exponent, provides qualitative/semi quantitative explanations for recovery as well as a simple explanation why nitrogen enhances the NBTI phenomena.
Keywords :
MOSFET; hydrogen bonds; magnetic resonance; MOSFET; NBTI phenomena; hydrogen bond breaking; hydrogen bond generation; hydrogen diffusion; magnetic resonance measurements; pMOS devices; qualitative quantitative explanation; semi-quantitative explanations; Current measurement; Diffusion bonding; Hydrogen; MOS devices; MOSFETs; Magnetic resonance; Niobium compounds; Nitrogen; Predictive models; Titanium compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2009. IRW '09. IEEE International
Conference_Location :
S. Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4244-3921-8
Electronic_ISBN :
1930-8841
Type :
conf
DOI :
10.1109/IRWS.2009.5383026
Filename :
5383026
Link To Document :
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