Instabilities in oxide semiconductor transparent thin film transistors

New amorphous oxide semiconductor transparent thin film transistors (TTFTs) exhibit good mobility (5 to >50 cm²/V-sec), are transparent, and can be processed at low temperatures. They show great promise for high performance large area electronics applications such as flexible electronics, transparent electronics, and analog current drivers for OLED displays. An overview of TFT operation, expected reliability concerns, and an up to date review of recently emerging work on the stability of these devices will be presented.