Title :
Current status of low-temperature radiator thermophotovoltaic devices
Author :
Charache, G.W. ; Egley, J.L. ; Danielson, L.R. ; DePoy, D.M. ; Baldasaro, P.F. ; Campbell, B.C. ; Hui, S. ; Fraas, L.M. ; Wojtczuk, S.J.
Author_Institution :
Lockheed Martin Inc., Schenectady, NY, USA
Abstract :
The current performance status of low-temperature radiator (<1000°C) thermophotovoltaic (TPV) devices is presented. For low-temperature radiators, both power density and efficiency are equally important in designing an effective TPV system. Comparisons of 1 cm×1 cm, 0.55 eV InGaAs and InGaAsSb TPV devices are presented. Currently, InGaAs lattice-mismatched devices offer superior performance in comparison to InGaAsSb lattice-matched devices, due to the former´s long-term development for numerous optoelectronic applications. However, lattice-matched antimony-based quaternaries offer numerous potential advantages
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photovoltaic cells; semiconductor device testing; solar cells; 0.55 eV; 1 cm; InGaAs; InGaAsSb; antimony-based quaternaries; efficiency; lattice-matched devices; lattice-mismatched devices; long-term development; low-temperature radiator; performance; power density; semiconductor; thermophotovoltaic devices; Filters; Indium gallium arsenide; Laboratories; Lattices; Molecular beam epitaxial growth; Photonic band gap; Plasma temperature; Semiconductor diodes; Semiconductor materials; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563966
