Title :
Microstructure related quantum conductance in Mn-doped ZnO resistive switching memory
Author :
Ren, S. ; Dong, J. ; Zhang, L. ; Huang, Y. ; Guo, J. ; Zhang, L. ; Zhao, J. ; Chen, W.
Author_Institution :
Key Lab. of Adv. Films of Hebei Province, Hebei Normal Univ., Shijiazhuang, China
Abstract :
The quantization of conductance in a Ti/ZnO:Mn/Pt resistive switching memory device is investigated in this study. The Mn-doped ZnO films are deposited by pulsed laser deposition at 400°C and post-annealed for 20 min. Observations show that the high crystallinity and fine microstructures in the ZnO:Mn film play an important role for the quantum conductance behavior.
Keywords :
II-VI semiconductors; annealing; crystal microstructure; electrical conductivity; manganese; metal-semiconductor-metal structures; platinum; pulsed laser deposition; resistive RAM; semiconductor thin films; titanium; wide band gap semiconductors; zinc compounds; Ti-ZnO:Mn-Pt; microstructures; post-annealing; pulsed laser deposition; quantum conductance; resistive switching memory; temperature 400 degC; time 20 min; Films; Grain boundaries; II-VI semiconductor materials; Microstructure; Nanoscale devices; Switches; Zinc oxide;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157752
