DocumentCode :
3145431
Title :
A 60GHz defected ground power divider using SiGe BiCMOS technology
Author :
Ma, Kaixue ; Mou, Shouxian ; Lu, Yang ; Meng, Lim Kok ; Yeo, Kiat Seng
Author_Institution :
Div. of Circuits & Syst., Nanyang Technol. Univ., Singapore, Singapore
fYear :
2011
fDate :
17-18 Nov. 2011
Firstpage :
1
Lastpage :
4
Abstract :
A 60GHz Wilkinson power divider using the meander lines with the floating defect grounding structure (DGS) is introduced and implemented by using the 0.18μm SiGe BiCMOS technology. The slow-wave characteristics of the meander-line and the floating defected ground structure are investigated and used for miniaturized power divider implementation. The dividers using poly resistor and metal resistor are also compared experimentally. The measured results show the frequency covers 40GHz~70GHz with the insertion loss of 2dB and isolation of better than 15dB. The phase balance is better than 2degrees and the amplitude balance is better than 0.1dB. The size of the divider is only 300μm by 300μm, which can be economically integrated with 60GHz radio chipset.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; power dividers; resistors; SiGe; SiGe BiCMOS technology; Wilkinson power divider; defected ground power divider; floating defect grounding structure; frequency 60 GHz; loss 2 dB; meander lines; metal resistor; miniaturized power divider; phase balance; poly resistor; radio chipset; size 0.18 mum; slow-wave characteristics; 60GHz Radio; Defect grounding structure; Filter; Linear Phase Shifter; Meander line; SiGe BiCMOS; Wilkinson power divider;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SoC Design Conference (ISOCC), 2011 International
Conference_Location :
Jeju
Print_ISBN :
978-1-4577-0709-4
Electronic_ISBN :
978-1-4577-0710-0
Type :
conf
DOI :
10.1109/ISOCC.2011.6138631
Filename :
6138631
Link To Document :
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