DocumentCode :
3145465
Title :
A DC to 14GHz fully differential amplifier for wideband low power applications
Author :
Kumar, Thangarasu Bharatha ; Ma, Kaixue ; Yeo, Kiat Seng ; Mou, Shouxian ; Nagarajan, Mahalingam
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear :
2011
fDate :
17-18 Nov. 2011
Firstpage :
9
Lastpage :
12
Abstract :
This paper presents a high performance wideband amplifier and justifies the performance with the aid of measurement results. The amplifier consumes very low power about 6.8mW from a supply voltage of 1.8V. The amplifier is designed using a cross coupled cascode topology to improve the Gain and Bandwidth. The design is implemented in a 0.18μm SiGe BiCMOS process (ft = 200GHz) with 9.3dB small signal differential Gain and a flat 3dB Bandwidth from DC to 14GHz. The design size of the core amplifier is 230μm × 80μm.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC amplifiers; differential amplifiers; low-power electronics; millimetre wave amplifiers; semiconductor materials; wideband amplifiers; BiCMOS process; SiGe; cross coupled cascode topology; frequency 200 GHz; fully differential amplifier; gain 9.3 dB; power 6.8 mW; size 0.18 mum; small signal differential gain; voltage 1.8 V; wideband low power amplifier; Differential amplifier; SiGe BiCMOS process; Wideband Amplifier; low power; millimeter-wave;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SoC Design Conference (ISOCC), 2011 International
Conference_Location :
Jeju
Print_ISBN :
978-1-4577-0709-4
Electronic_ISBN :
978-1-4577-0710-0
Type :
conf
DOI :
10.1109/ISOCC.2011.6138633
Filename :
6138633
Link To Document :
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