Enhanced reliability of HEMT by using a TiN barrier

Author

Taniguchi, M. ; Amano, Y. ; Nemoto, T. ; Shinohara, K.

Author_Institution

Nippon Mining Co. Ltd., Saitama, Japan

fYear

1990

fDate

27-29 March 1990

Firstpage

94

Lastpage

98

Abstract

The use of Auger electron spectroscopy (AES) to explore the failure mechanism of high electron mobility transistors (HEMTs) subjected to high temperature storage (HTS) and operating life tests is discussed. Degradation at the early stage of HTS is associated with significant amounts of Ga and As outdiffusion through the ohmic areas. A TiN barrier placed between the AuGe/Ni/Au contact and the Ti/Pt/Au overlay metal is effective in eliminating this degradation and increasing the mean time to failure (MTTF) to >10/sup 8/ hours at 125 degrees C channel temperature.<>

Keywords

Auger effect; III-V semiconductors; aluminium compounds; diffusion in solids; failure analysis; gallium arsenide; high electron mobility transistors; life testing; metallisation; reliability; semiconductor device testing; titanium compounds; 10/sup 8/ hrs; 125 degC; AuGe-Ni-Au-TiN-Ti-Pt-Au; Auger electron spectroscopy; GaAs-AlGaAs; HEMT; TiN barrier; channel temperature; degradation; diffusion barrier; failure mechanism; high temperature storage; mean time to failure; ohmic areas; operating life tests; outdiffusion; overlay metal; Degradation; Electron mobility; Failure analysis; Gold; HEMTs; High temperature superconductors; Life testing; MODFETs; Spectroscopy; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1990. 28th Annual Proceedings., International

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/RELPHY.1990.66068

Filename

66068