DocumentCode :
3146365
Title :
High throughput epitaxy of ferroelectric PVDF-TrFE thin films on molecularly ordered PTFE surface for non-volatile polymer memory
Author :
Park, Youn Jung ; Kang, Seok Ju ; Lotz, Bernard ; Brinkmann, M. ; Park, Cheolmin
Author_Institution :
Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea
fYear :
2008
fDate :
15-17 Sept. 2008
Abstract :
Here we present the formation of PVDF-TrFE thin films epitaxially grown on molecularly ordered PTFE surface by spin coating and subsequent thermal annealing. Nearly single crystalline polymer films were obtained with a axis of PVDF-TrFE crystals aligned parallel to the PTFE surface normal, giving rise to the crystalline lamellae directionally oriented perpendicular to the chain axis of PTFE. Furthermore, the facile formation of uniform single crystal PTFE surface on a metallic substrate in very large area allowed us not only to fabricate arrays of ferroelectric capacitors but also FeFET with the epitaxially grown PVDF-TrFE thin film.
Keywords :
ferroelectric materials; ferroelectric thin films; materials preparation; polymer films; random-access storage; spin coating; PVDF-TrFE films; crystalline structure; ferroelectric thin films; molecularly ordered PTFE surface; nonvolatile polymer memory; poly(tetrafluoroethylene); poly(vinylidene fluoride-cotrifluoroethylene); spin coating technique; Annealing; Capacitors; Coatings; Crystallization; Epitaxial growth; Ferroelectric materials; Nonvolatile memory; Polymer films; Substrates; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets, 2008. ISE-13. 13th International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-1850-3
Electronic_ISBN :
978-1-4244-1851-0
Type :
conf
DOI :
10.1109/ISE.2008.4814003
Filename :
4814003
Link To Document :
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