Title :
Nuclear radiation detector based on ion implanted p-n junction in 4H-SiC
Author :
Vervisch, V. ; Issa, F. ; Ottaviani, L. ; Szalkai, Dora ; Vermeeren, L. ; Klix, Axel ; Hallen, Anders ; Kuznetsov, A. ; Lazar, Mircea ; Lyoussi, A.
Author_Institution :
Aix-Marseille Univ., Marseille, France
Abstract :
In this paper, we propose a new device detector based on ion implanted p-n junction in 4H-SiC for nuclear instrumentation. We showed the interest to use 10Boron as a Neutron Converter Layer in order to detect thermal neutrons. We present the main results obtained during irradiation tests performed in the Belgian Reactor 1. We show the capability of our detector by means of first results of the detector response at different reverse voltage biases and at different reactor power.
Keywords :
p-n junctions; silicon radiation detectors; 4H-SiC; Belgian reactor-1; ion implanted p-n junction; neutron converter layer; nuclear instrumentation; nuclear radiation detector; reactor power; reverse voltage; Detectors; Inductors; Neutrons; Radiation effects; Schottky diodes; Silicon carbide; Thyristors; 4H-SiC; electrical characterizations; ion implantation; neutron irradiation; pn junction;
Conference_Titel :
Advancements in Nuclear Instrumentation Measurement Methods and their Applications (ANIMMA), 2013 3rd International Conference on
Conference_Location :
Marseille
Print_ISBN :
978-1-4799-1046-5
DOI :
10.1109/ANIMMA.2013.6728002
