Title :
Effects of free carriers in device with ferroelectric polymer P(VDF-TrFE) and organic semiconductor interface
Author :
Nguyen, C.A. ; Mhaisalkar, S.G. ; Lee, P.S.
Author_Institution :
Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ., Singapore
Abstract :
This paper examines the effects and transport mechanism of free charges existing in capacitor and diode using P(VDF-TrFE) and organic semiconductor.
Keywords :
Fermi level; annealing; capacitors; electronic density of states; ferroelectric materials; ferroelectric thin films; hopping conduction; organic semiconductors; polymer films; semiconductor thin films; spin coating; wave functions; Au; Fermi level; ITO; ITO glass; P(VDF-TrFE); annealing; capacitor; carrier wave function; charge transport; compensating charges; density of states; diode; electrodes; ferroelectric polymer; free carriers; interchain hopping; nonrandom distributing asymmetrical barrier heights; organic semiconductor; pentacene; size 360 nm; size 50 nm; spin coating; time 2 hour; transport mechanism; trapped charges; Capacitors; Cooling; Ferroelectric materials; Glass; Gold; Materials science and technology; Organic semiconductors; Pentacene; Polymers; Semiconductor films;
Conference_Titel :
Electrets, 2008. ISE-13. 13th International Symposium on
Conference_Location :
Tokyo
Print_ISBN :
978-1-4244-1850-3
Electronic_ISBN :
978-1-4244-1851-0
DOI :
10.1109/ISE.2008.4814010
