Title :
Development of high efficiency p+/n InP solar cells for hetero-epitaxial applications
Author :
Hoffman, Richard W., Jr. ; Fatemi, Navid S. ; Jenkins, Phillip P. ; Scheiman, David A. ; Ringel, Steven A. ; Davis, William ; Weizer, Victor G. ; Wilt, David M. ; Brinker, David J.
Author_Institution :
Essential Res. Inc., Cleveland, OH, USA
Abstract :
We have developed high efficiency p+/n/n+ homoepitaxial InP space solar cells with the intent of applying the technology to hetero-epitaxial InP cell growth on Ge or Si substrates. Our cell design eliminates the use of InGaAs contact layers under the front grid metallization. A p+/n/n+ cell demonstrated a conversion efficiency of 16.2% under AM0, 1 sun, 25°C conditions. Cell performance instabilities were observed as a function of aging and light soaking. Hydrogen incorporated during cool-down from OMVPE growth temperature may have been responsible for the observed instabilities. Conversion efficiency values exceeding 18% are expected with minor alterations to our cell design
Keywords :
III-V semiconductors; indium compounds; p-n junctions; photovoltaic power systems; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; semiconductor thin films; solar cells; space vehicle power plants; vapour phase epitaxial growth; 1 sun conditions; 16.2 percent; 25 C; AM0; Ge; Ge substrate; InP; InP-Ge; InP-Si; OMVPE growth temperature; Si; Si substrate; aging; cell performance instabilities; conversion efficiency; cool-down; hetero-epitaxial InP cell growth; high efficiency solar cells; hydrogen; light soaking; p+/n/n+ homoepitaxial InP solar cells; space solar cells; Aging; Hydrogen; Indium gallium arsenide; Indium phosphide; Metallization; Ohmic contacts; Photovoltaic cells; Space technology; Substrates; Sun;
Conference_Titel :
Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-3166-4
DOI :
10.1109/PVSC.1996.563974
