DocumentCode
31468
Title
Intrinsic Time Zero Dielectric Breakdown Characteristics of HfAlO Alloys
Author
Jin Ju Kim ; MinWoo Kim ; Ukjin Jung ; Kyung Eun Chang ; Sangkyung Lee ; Yonghun Kim ; Young Gon Lee ; Rino Choi ; Byoung Hun Lee
Author_Institution
Dept. of Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Volume
60
Issue
11
fYear
2013
fDate
Nov. 2013
Firstpage
3683
Lastpage
3689
Abstract
A thermochemical model describing the relationship between the dielectric breakdown field (EBD) and dielectric constant (k) of high- k dielectric has been calibrated for HfxAl1-xOy alloys with k values from 7 to 24. Metal-insulator-metal (MIM) capacitors with HfxAl1-xOy high- k dielectric films were used to extract the intrinsic time zero dielectric breakdown characteristics. Breakdown field values of these HfxAl1-xOy alloys were found to decrease as a function of k-0.77 while the electric field acceleration parameter, γ, increases as a function of k1.37. Using the thermochemical model calibrated with the experimental data, a HfxAl1-xOy 10-year lifetime was extrapolated as a function of the dielectric constant to provide insight for future dielectric development.
Keywords
MIM devices; capacitors; electric breakdown; hafnium compounds; high-k dielectric thin films; permittivity; thermochemistry; HfxAl1-xOy; HfAlO alloys; MIM capacitors; dielectric breakdown field; dielectric constant; electric field acceleration parameter; high-k dielectric film; intrinsic time zero dielectric breakdown characteristics; metal-insulator-metal capacitors; thermochemical model; Aluminum oxide; Dielectric constant; Electric breakdown; High K dielectric materials; Leakage currents; Reliability; ${rm HfO}_{rm 2}$ ; ${rm Al}_{rm 2}{rm O}_{3}$ ; MIM capacitor; breakdown field; dielectric constant; lifetime; thermochemical model; time-dependent dielectric breakdown (TDDB);
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2013.2281857
Filename
6615927
Link To Document