Local mechanical stress induced defects for Ti and Co/Ti silicidation in sub-0.25 /spl mu/m MOS-technologies

Author

Steegen, A. ; Maex, K. ; De Wolf, I.

Author_Institution

IMEC, Leuven, Belgium

fYear

1998

fDate

9-11 June 1998

Firstpage

200

Lastpage

201

Abstract

/spl mu/-Raman spectroscopy (/spl mu/RS) measurements of local mechanical stress in the Si induced by salicidation have been combined with simulations by Finite Element Modeling (FEM) down to 0.1 /spl mu/m. The experiments prove that the difference in material properties of TiSi/sub 2/ and CoSi/sub 2/ can yield very different stress levels in the Si underneath the silicide. These stress levels become critical for sub-0.25 /spl mu/m processes and can result in generation of dislocation loops. Therefore, the mechanical characteristics related to the silicide formation technology become a critical parameter in the optimization of the silicide process.

Keywords

MIS devices; Raman spectra; cobalt compounds; dislocation loops; finite element analysis; internal stresses; semiconductor device metallisation; titanium compounds; 0.25 micron; Co/Ti silicidation; CoSi/sub 2/; MOS technology; Ti silicidation; TiSi/sub 2/; defect; dislocation loop; finite element model; mechanical stress; micro-Raman spectroscopy; Compressive stress; Conductivity; Silicidation; Silicides; Silicon; Stress measurement; Temperature; Tensile stress; Thermal expansion; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1998. Digest of Technical Papers. 1998 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-4770-6

Type

conf

DOI

10.1109/VLSIT.1998.689256

Filename

689256