Simultaneous measurements of (Q-V, C-V) and (Q-t, C-t) characteristics in an MFS capacitor with ferroelectric VDF-TrFE copolymer as a gate dielectric

Author

Yamamoto, R. ; Okada, A. ; Ito, D. ; Takahashi, Y. ; Furukawa, T.

Author_Institution

Gunma Ind. Technol. Center, Maebashi

fYear

2008

fDate

15-17 Sept. 2008

Abstract

A metal-ferroelectrics-semiconductor (MFS) capacitor with a ferroelectric polymer as a gate dielectric has recently attracted much interest owing to its potential applications in nonvolatile memory. In order to understand switching dynamics, we performed simultaneous measurements of the charge Q and the capacitance C for Au/vinylidene fluoride- trifluoroethylene (VDF-TrFE) /n-Si structure using a double- frequency voltage consisting of a low-frequency high voltage and a high-frequency sinusoidal low voltage.

Keywords

MIS capacitors; elemental semiconductors; ferroelectric capacitors; ferroelectric storage; ferroelectric switching; gold; high-frequency effects; polymer blends; polymer films; random-access storage; silicon; spin coating; Au-Si; Au-vinylidene fluoride-trifluoroethylene-n-Si structure; C-V characteristics; C-t characteristics; MFS capacitor; Q-V characteristics; Q-t characteristics; donor concentration; double-frequency voltage; ferroelectric VDF-TrFE copolymer film; gate dielectrics; high-frequency sinusoidal low voltage; metal-ferroelectric-semiconductor capacitor; nonvolatile memory; size 300 nm; spin-coating; switching dynamics; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Current measurement; Dielectric measurements; Ferroelectric materials; Nonvolatile memory; Performance evaluation; Polymers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrets, 2008. ISE-13. 13th International Symposium on

Conference_Location

Tokyo

Print_ISBN

978-1-4244-1850-3

Electronic_ISBN

978-1-4244-1851-0

Type

conf

DOI

10.1109/ISE.2008.4814072

Filename

4814072