Title :
SEETEST: a system dedicated to the characterisation of memory sensitivity to SEE
Author :
Falguere, D. ; Duzellier, S.
Author_Institution :
Dept. d´´Etudes et de Recherche en Technol. Spatiale, ONERA/CERT, Toulouse, France
Abstract :
With new technologies, high integration levels of space components, Single Event Effects are becoming of major concern for spacecraft reliability. MEMTEST and SELTEST are respectively upset and latch-up characterization system developed at DERTS. Irradiation tests have been performed, on SRAM and EEPROM devices, by means of conventional Californium sources and heavy ion accelerator (IPN Van de Graaff machine ORSAY). The results are discussed. Test validity problems and the influence of experimental parameters are examined
Keywords :
EPROM; SRAM chips; aerospace instrumentation; aerospace test facilities; aerospace testing; integrated circuit testing; ion beam effects; radiation hardening (electronics); EEPROM; SRAM; heavy ion testing; latch-up characterization; memory sensitivity; single event effects sensitivity; spacecraft reliability; EPROM; Ion accelerators; Lithium; Microelectronics; Performance evaluation; Random access memory; Single event upset; Space technology; Space vehicles; System testing;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213551
