DocumentCode
3148366
Title
Transient radiation response of VLSI circuits: shadowing effects and pulse widths dependence in laser measurements
Author
Jönsson, M. ; Mattsson, S.
Author_Institution
SAAB SPACE AB, Goteborg, Sweden
fYear
1991
fDate
9-12 Sep 1991
Firstpage
450
Lastpage
454
Abstract
Transient radiation response on VLSI-circuits (SRAM, EPROM, EEPROM) of various complexities were studied for different pulse widths using both laser and accelerator sources. The shadowing effects of the incident laser light due to the metallization were also investigated
Keywords
EPROM; SRAM chips; VLSI; integrated circuit testing; measurement by laser beam; metallisation; radiation effects; transient response; 3 MeV; EEPROM; EPROM; SRAM; VLSI-circuits; laser measurements; latchup threshold values; metallization; pulse widths dependence; shadowing effects; transient radiation response; Circuit simulation; Circuit testing; Laboratories; Metallization; Optical pulses; Pulse circuits; Pulse measurements; Shadow mapping; Space vector pulse width modulation; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location
La Grande-Motte
Print_ISBN
0-7803-0208-7
Type
conf
DOI
10.1109/RADECS.1991.213556
Filename
213556
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