DocumentCode :
3148479
Title :
VHDL - AMS modeling of silicon carbide power semiconductor devices
Author :
Kashyap, Avinash S. ; Vemulapally, Chandrasekhar ; Mantooth, H. Alan
Author_Institution :
Arkansas Univ., Fayetteville, AR, USA
fYear :
2004
fDate :
15-18 Aug. 2004
Firstpage :
50
Lastpage :
54
Abstract :
VHDL-AMS is gaining ground as the standard modeling language for devices and systems. A new modeling tool, Paragon, is presented in this work that helps the user to create models with only the topology and the characteristic equations. Paragon then generates the model in various HDLs such as VHDL-AMS, MAST and Verilog-A. As an example, a silicon carbide vertical JFET/SIT is modeled using Paragon. SiC JFETs are power switches that have a variety of applications in the industry. A compact model is developed in VHDL-AMS based on the device geometry and SiC material properties. The on-state model has been tested in mentor graphics´ system vision VHDL-AMS simulator and it clearly replicates the behavior seen in experimental characterization as the validation results show.
Keywords :
hardware description languages; junction gate field effect transistors; power engineering computing; power semiconductor devices; switching circuits; Paragon; SiC material properties; VHDL-AMS modeling; Verilog-A; mentor graphics system vision; power switches; silicon carbide power semiconductor devices; standard modeling language; Equations; Geometry; Hardware design languages; Material properties; Power semiconductor devices; Power system modeling; Silicon carbide; Solid modeling; System testing; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computers in Power Electronics, 2004. Proceedings. 2004 IEEE Workshop on
ISSN :
1093-5142
Print_ISBN :
0-7803-8502-0
Type :
conf
DOI :
10.1109/CIPE.2004.1428119
Filename :
1428119
Link To Document :
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