Title :
Analysis of ionizing radiation induced damage in charge coupled devices
Author :
Roy, F. ; Vandekerckhove, M. ; Thenoz, Y. ; Commere, B. ; Baratier, L.
Author_Institution :
Thomson Composants Militaires et Spatiaux, Saint-Egreve, France
Abstract :
Ionizing environment effects on CCD test devices are studied. Like MOS technology, CCD technology exhibits active and field oxide threshold voltage shift. Resulting from this shift, transfer efficiency degradation is observed on two phase CCD registers. On the other hand, 4 phase CCD registers working in specific conditions retain charge storage and transfer efficiency performances for a large total dose range. The dark current increase comes from peripheral insulation contribution. This degradation can result from a combination of mechanical stress induced by the bird´s beak and hole accumulation induced by the ionizing radiation in the peripheral insulator. These two effects contribute to increase the interface states density and, by field effect, to extend the area of the active interface states along the bird´s beak
Keywords :
CCD image sensors; interface electron states; radiation effects; CCD imager; charge coupled devices; dark current increase; field effect; interface states density; ionising radiation; peripheral insulation contribution; radiation induced damage; threshold voltage shift; transfer efficiency degradation; Charge coupled devices; Charge-coupled image sensors; Circuits; Degradation; Insulation; Interface states; Ionizing radiation; Performance analysis; Performance evaluation; Testing;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213580