DocumentCode :
3149468
Title :
MOS dosimeters-improvement of responsivity
Author :
Holmes, Andrew ; Adams, L. ; Ensell, G.
fYear :
1991
fDate :
9-12 Sep 1991
Firstpage :
65
Lastpage :
69
Abstract :
Radiation-sensitive field effect transistors (RADFETs), based on the metal-oxide-semiconductor transistor, are used as remotely and non-destructively read dosimeters in spacecraft and in medicine. The RADFET has evolved from the simple MOS transistor device by a research on oxide thickness dependence of charge buildup and extensive dosimetric performance measurements. To develop a product line, RADFET devices with increasingly thick oxides have been made. Some results of this work are described
Keywords :
dosimeters; insulated gate field effect transistors; semiconductor technology; MOS dosimeters; RADFET; charge buildup; medicine; oxide thickness dependence; radiation sensitive FETs; responsivity; spacecraft; Circuits; Control systems; Dosimetry; FETs; Insulation; MOSFETs; Semiconductor films; Space charge; Space vehicles; Thickness control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
Type :
conf
DOI :
10.1109/RADECS.1991.213607
Filename :
213607
Link To Document :
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