Title :
Post irradiation effects (PIE) in integrated circuits [MOS]
Author :
Barnes, C.E. ; Fleetwood, D.M. ; Shaw, D.C. ; Winokur, P.S.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Post Irradiation Effects (PIE) ranging from normal recovery to catastrophic failure have been observed in integrated circuits during the PIE period. These variations indicate that a rebound or PIE `recipe´ used for radiation hardness assurance must be chosen with care. This paper provides examples of PIE in a variety of integrated circuits of importance to spacecraft electronics
Keywords :
MOS integrated circuits; failure analysis; integrated circuit testing; radiation hardening (electronics); PIE, post irradiation effects; catastrophic failure; integrated circuits; normal recovery; radiation hardness assurance; rebound; spacecraft electronics; Annealing; Circuit testing; Ionizing radiation; Laboratories; MOS devices; MOSFETs; Propulsion; Radiation hardening; Temperature; Threshold voltage;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213616
