Title :
Radiation-induced changes in floating-body phenomena in SOI MOSFETs
Author :
Ouisse, T. ; Ghibaudo, G. ; Brini, J. ; Cristoloveanu, S. ; Borel, G.
Author_Institution :
Thomson-TMS, Saint-Egreve, France
Abstract :
An analytical model and experimental results are proposed to account for the floating body effects in silicon-on-insulator (SOI) MOSFETs. It is shown both theoretically and experimentally that an SOI MOSFET may exhibit simultaneously a negative conductance and a negative transconductance. The evolution of these effects under an X-ray exposure is studied and described in detail
Keywords :
X-ray effects; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; SOI MOSFETs; X-ray exposure; analytical model; floating-body phenomena; negative conductance; negative transconductance; Analytical models; Diodes; Hysteresis; Insulation; Linear predictive coding; MOSFETs; Mathematical model; Space technology; Threshold voltage; Transconductance;
Conference_Titel :
Radiation and its Effects on Devices and Systems, 1991. RADECS 91., First European Conference on
Conference_Location :
La Grande-Motte
Print_ISBN :
0-7803-0208-7
DOI :
10.1109/RADECS.1991.213638
