Title :
Snubberless superfast high power module using MOS driven field controlled thyristors
Author :
Grüning, H. ; De Lambilly, H. ; Lilja, K.
Author_Institution :
ASEA Brown Boveri, Baden, Switzerland
Abstract :
The steady-state and switching behaviour of field-controlled thyristors (FCTh) have been analyzed by 2D simulation and experiment. By means of a low inductive drive, very fast turn-on ( tau /sub on/ approximately=80 ns) and turn-off (t/sub st/>
Keywords :
metal-insulator-semiconductor devices; power electronics; semiconductor device models; thyristors; 1600 V; 2 kV; 2.5 kV; 200 A; 2D simulation; 800 V; MOS driven field controlled thyristors; SOA; commutation; current distribution homogeneity; high power module; modelling; power electronics; resonant applications; snubberless; steady-state behavior; switching behaviour; switching loss; transients; turn-off; turn-on; Analytical models; Current distribution; Light emitting diodes; Multichip modules; Predictive models; Resonance; Semiconductor optical amplifiers; Steady-state; Switching loss; Thyristors;
Conference_Titel :
Power Electronics Specialists Conference, 1990. PESC '90 Record., 21st Annual IEEE
Conference_Location :
San Antonio, TX, USA
DOI :
10.1109/PESC.1990.131217
