• DocumentCode
    3152240
  • Title

    Design of a broadband and highly efficient 45W GaN power amplifier via simplified real frequency technique

  • Author

    Wu, Dalei ; Mkadem, Farouk ; Boumaiza, Slim

  • Author_Institution
    University of Waterloo, Canada
  • fYear
    2010
  • fDate
    23-28 May 2010
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    A comprehensive approach for designing broadband and highly efficient power amplifier based on optimal impedance analysis and simplified real frequency technique (SRFT) is presented. Upon determining the impedances for highest efficiency across the bandwidth of interest, the SRFT is used to obtain the optimal matching topology and element values. The effectiveness of this design technique is illustrated using a commercially available 45W GaN device which achieved an average drain efficiency of 63% from 1.9 GHz to 2.9 GHz (∼42%) with an average output power and gain of 45.8 dBm and 10.8 dB respectively. The PA with DPD yielded ACPR below −50dBc when driven with WCDMA and LTE at 2.14 and 2.6 GHz respectively
  • Keywords
    Bandwidth; Broadband amplifiers; Frequency; Gallium nitride; High power amplifiers; Impedance; Multiaccess communication; Optimal matching; Power generation; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
  • Conference_Location
    Anaheim, CA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-6056-4
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2010.5518045
  • Filename
    5518045