Title :
Distributed amplifiers in InP DHBT for 100-Gbit/s operation
Author :
Dupuy, J. -Y ; Konczykowska, A. ; Jorge, F. ; Riet, M. ; Godin, J.
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
Abstract :
Two single-ended distributed amplifiers were designed and fabricated using a 0.7-μm InP double heterojunction bipolar transistor (DHBT) technology. The first amplifier´s gain and bandwidth are respectively around 15 dB and 90 GHz. The second amplifier´s gain and bandwidth are respectively higher than 13 dB and 110 GHz. Eye diagram measurements were performed at 86 Gbit/s showing clear eye opening and large output swing, respectively as high as 2.7 Vpp and 2.4 Vpp, for the first and second amplifier. These distributed amplifiers are well suited for a use as modulator drivers for 100 Gbit/s optical communication systems.
Keywords :
III-V semiconductors; distributed amplifiers; heterojunction bipolar transistors; indium compounds; optical fibre networks; DHBT technology; bit rate 100 Gbit/s; bit rate 86 Gbit/s; double heterojunction bipolar transistor; eye diagram measurements; modulator drivers; optical communication systems; single-ended distributed amplifiers; size 0.7 mum; Bandwidth; Bipolar transistors; DH-HEMTs; Distributed amplifiers; Driver circuits; III-V semiconductor materials; Indium phosphide; Optical amplifiers; Semiconductor optical amplifiers; Signal analysis; Distributed amplifiers; driver circuits; heterojunction bipolar transistors; indium compounds;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5518056
