Title :
Parameter extraction for the PSP MOSFET model by the combination of genetic and Levenberg-Marquardt algorithms
Author :
Zhou, Q. ; Yao, W. ; Wu, W. ; Li, X. ; Zhu, Z. ; Gildenblat, Gennady
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
fDate :
March 30 2009-April 2 2009
Abstract :
Based on the combination of the genetic and Levenberg-Marquardt algorithms, a new method is developed to perform both local and global parameter extraction for the PSP MOSFET model. It has been successfully used to extract parameter sets for a 65-nm technology node. Numerical examples demonstrate its ability to obtain highly accurate model parameter values without excessive computational cost.
Keywords :
MOSFET; genetic algorithms; semiconductor device models; Levenberg-Marquardt algorithm; PSP MOSFET model; combined GA-LM algorithm; genetic algorithm; global parameter; local parameter; parameter extraction; size 65 nm; CMOS technology; Circuit simulation; Computational efficiency; Convergence; Equations; Genetics; MOSFET circuits; Parameter extraction; Semiconductor device modeling; Standards development;
Conference_Titel :
Microelectronic Test Structures, 2009. ICMTS 2009. IEEE International Conference on
Conference_Location :
Oxnard, CA
Print_ISBN :
978-1-4244-4259-1
DOI :
10.1109/ICMTS.2009.4814627
