43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers

Author

Piotrowicz, S. ; Ouarch, Z. ; Chartier, E. ; Aubry, R. ; Callet, G. ; Floriot, D. ; Jacquet, J.C. ; Jardel, O. ; Morvan, E. ; Reveyrand, T. ; Sarazin, N. ; Delage, S.L.

Author_Institution

III-V Lab., Alcatel-Thales, Marcoussis, France

fYear

2010

fDate

23-28 May 2010

Firstpage

505

Lastpage

508

Abstract

This paper presents the results obtained on X-Band GaN MMICs developed in the frame of the Korrigan project launched by the European Defense Agency. GaN has already demonstrated excellent output power levels, nevertheless demonstration of excellent PAE associated to very high power in MMIC technology is still challenging. In this work, we present State-of-the-Art results on AlGaN/GaN MMIC amplifiers. An output power of 43W with 52% of PAE was achieved at 10.5 GHz showing that high power associated with high PAE can be obtained at X-band using MMIC GaN technology.

Keywords

MMIC; aluminium compounds; amplifiers; gallium compounds; high electron mobility transistors; AlGaN-GaN; European Defense Agency; Korrigan project; MMIC technology; PAE X-Band AlGaN/GaN HEMTs MMIC amplifiers; X-band GaN MMIC; frequency 10.5 GHz; power 43 W; Aluminum gallium nitride; Gallium nitride; HEMTs; MMICs; MODFETs; Plasma measurements; Plasma temperature; Power amplifiers; Power generation; Silicon carbide; GaN; HEMT; MMIC; X-band; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5518097

Filename

5518097