Title :
Investigation of NBTI recovery induced by conventional measurements for pMOSFETs with ultra-thin SiON gate dielectrics
Author :
Jin, Lei ; Xu, Mingzhen
Author_Institution :
Peking Univ., Beijing
Abstract :
The NBTI recovery induced by conventional measurements and its physical origin are studied. It is demonstrated that, with carefully designed experiments using conventional slow equipments, the measurement induced recovery can be evaluated and investigated. It is re-affirmed that the measurement induced recovery is primarily due to the discharge of bulk traps in ultra-thin SiON. The passivation of interface traps plays a less important role, as compared with discharge of bulk traps.
Keywords :
MOSFET; semiconductor device measurement; semiconductor device reliability; silicon compounds; NBTI recovery; SiON; bulk trap; interface trap; pMOSFET; ultrathin SiON gate dielectrics; Degradation; Dielectric measurements; MOSFETs; Measurement techniques; Niobium compounds; Phase measurement; Stress measurement; Time measurement; Titanium compounds; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2007. IRW 2007. IEEE International
Conference_Location :
S. Lake Tahoe, CA
Print_ISBN :
978-1-4244-1771-9
Electronic_ISBN :
1930-8841
DOI :
10.1109/IRWS.2007.4469218
