Title :
Reliability study of thin inter-poly dielectrics for non-volatile memory application
Author :
Mori, Seiichi ; Kaneko, Yukio ; Arai, Norihisa ; Ohshima, Yoichi ; Araki, Hitoshi ; Narita, Kazuhito ; Sakagami, Eiji ; Yoshikawa, Kuniyoshi
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
The key factors which dominate the leakage current in poly-oxide are reviewed, and intrinsic limitations in thinner poly-oxide to device application are investigated. The ON (oxide-nitride-oxide) structure that overcomes poly-oxide thinning limitations is described. This stacked film exhibits superior electric field strength due to the inherent electron trapping-assisted self-limiting process. UV erase characteristics for EPROM cells with the ONO structure are considered. The scaling-down of the ONO interpoly dielectric, taking into consideration memory cell charge retention capability, is discussed.<>
Keywords :
EPROM; dielectric thin films; electric strength; leakage currents; reliability; semiconductor-insulator boundaries; silicon compounds; EPROM cells; ONO interpoly dielectric; Si:P; SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/-Si:P; UV erase characteristics; electric field strength; inherent electron trapping-assisted self-limiting process; intrinsic limitations; leakage current; memory cell charge retention capability; nonvolatile memory applications; scaling-down; stacked film; thin inter-poly dielectrics; Dielectric devices; Dielectric substrates; EPROM; Leakage current; Nonvolatile memory; Oxidation; Random access memory; Semiconductor device reliability; Semiconductor devices; Surface texture;
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/RELPHY.1990.66076
