Title :
THz MMICs based on InP HBT Technology
Author :
Hacker, Jorg ; Seo, Munkyo ; Young, A.C. ; Griffith, Zach ; Urteaga, M. ; Reed, Thomas ; Rodwell, M.
Author_Institution :
Teledyne Scientific & Imaging, Thousand Oaks, United States
Abstract :
An indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) based suite of terahertz monolithic integrated circuits (TMICs) fabricated using 256nm InP DHBT transistors and a multipurpose three metal layer interconnect system is reported. The InP DHBT MMIC process is well suited for TMICs due to its high bandwidth (fmax = 808 GHz) and high breakdown voltage (BVCBo = 4V) and integrated 10-µm thick layer of BCB dielectric supporting both low-loss THz microstrip lines for LNA, PA, and VCO tuning networks, and high-density thin-film interconnects for compact digital and analog blocks. TMIC low noise and driver amplifiers, fixed and voltage controlled oscillators, dynamic frequency dividers, and double-balanced Gilbert cell mixers have been designed and fabricated. These results demonstrate the capability of 256nm InP DHBT technology to enable sophisticated single-chip heterodyne receivers and exciters for operation at THz frequencies.
Keywords :
Bipolar transistors; DH-HEMTs; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit interconnections; Integrated circuit technology; MMICs; Monolithic integrated circuits; Submillimeter wave technology; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5518124