DocumentCode
315497
Title
Novel mechanism for ultrafast optical nonlinearity in semiconductor laser amplifier using assist light
Author
Tsurusawa, M. ; Usami, M. ; Matsushima, Y.
Author_Institution
R&D Labs., KDD, Saitama, Japan
fYear
1997
fDate
11-13 Aug. 1997
Firstpage
68
Lastpage
69
Abstract
We have proposed and first demonstrated a novel mechanism for ultrafast optical nonlinearity in semiconductor laser amplifiers as saturable absorbers. We have obtained the reduced carrier lifetime of less than 70 ps by stimulated recombination due to a novel assist light. The further reduction of lifetime can be expected for shorter devices. This novel mechanism is promising for ultra-high repetition-rate gate function and noise reduction function, because there is little heat generation process through this fast stimulated emission.
Keywords
carrier lifetime; high-speed optical techniques; optical saturable absorption; quantum well lasers; stimulated emission; waveguide lasers; 70 ps; MQW lasers; assist light; fast stimulated emission; heat generation p; lifetime reduction; multi quantum well lasers; noise reduction function; reduced carrier lifetime; saturable absorbers; semiconductor laser amplifier; stimulated recombination; ultra-high repetition-rate gate function; ultrafast optical nonlinearity; Charge carrier lifetime; Laser noise; Optical noise; Optical pumping; Optical signal processing; Optical waveguides; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location
Montreal, Que., Canada
Print_ISBN
0-7803-3891-X
Type
conf
DOI
10.1109/LEOSST.1997.619225
Filename
619225
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