• DocumentCode
    315497
  • Title

    Novel mechanism for ultrafast optical nonlinearity in semiconductor laser amplifier using assist light

  • Author

    Tsurusawa, M. ; Usami, M. ; Matsushima, Y.

  • Author_Institution
    R&D Labs., KDD, Saitama, Japan
  • fYear
    1997
  • fDate
    11-13 Aug. 1997
  • Firstpage
    68
  • Lastpage
    69
  • Abstract
    We have proposed and first demonstrated a novel mechanism for ultrafast optical nonlinearity in semiconductor laser amplifiers as saturable absorbers. We have obtained the reduced carrier lifetime of less than 70 ps by stimulated recombination due to a novel assist light. The further reduction of lifetime can be expected for shorter devices. This novel mechanism is promising for ultra-high repetition-rate gate function and noise reduction function, because there is little heat generation process through this fast stimulated emission.
  • Keywords
    carrier lifetime; high-speed optical techniques; optical saturable absorption; quantum well lasers; stimulated emission; waveguide lasers; 70 ps; MQW lasers; assist light; fast stimulated emission; heat generation p; lifetime reduction; multi quantum well lasers; noise reduction function; reduced carrier lifetime; saturable absorbers; semiconductor laser amplifier; stimulated recombination; ultra-high repetition-rate gate function; ultrafast optical nonlinearity; Charge carrier lifetime; Laser noise; Optical noise; Optical pumping; Optical signal processing; Optical waveguides; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
  • Conference_Location
    Montreal, Que., Canada
  • Print_ISBN
    0-7803-3891-X
  • Type

    conf

  • DOI
    10.1109/LEOSST.1997.619225
  • Filename
    619225