Title :
InP-Based InAlAs/InGaAs Double-Gate Transistors Beyond Conventional HEMT´s Limitations
Author :
Wichmann, N. ; Bollaert, S. ; Vasallo, B.G. ; Wallart, X. ; Dambrine, G. ; Cappy, A.
Author_Institution :
IEMN-DHS, Villeneuve d´´Ascq
Abstract :
We report on the design, fabrication and characterization of 100nm T-gates In0.52Al0.48As/In0.53Ga0.47 As double-gate HEMTs (DG-HEMT) on InP substrate. In comparison with single gate conventional HEMT, maximum oscillation frequency (fmax) was increased by 30% when the DG-HEMT operate in simple gate command (DG-HEMT-SC) due to the reduction of short channel effects. On the other hand, in double-gate command operation mode (DG-HEMT-DC), control of the threshold voltage of DG-HEMT was achieved while keeping constant DC and RF performances. In this operation mode, these three-port devices were considered as being very effective for millimeter-wave mixing applications and were promising devices for the fabrication of velocity modulation transistor (VMT) (Sakaki, 1982)
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; 100 nm; In0.52Al0.48As-In0.53Ga0.47 As-InP; double-gate HEMT; double-gate command operation mode; double-gate transistors; high electron mobility transistors; millimeter-wave mixing applications; short channel effects; simple gate command; three-port devices; threshold voltage; velocity modulation transistor; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Millimeter wave transistors; Radio frequency; Threshold voltage; Voltage control; Benzocyclobutene (BCB); High electron mobility transistor (HEMT); InP; adhesive bonding; double-gate; velocity modulation transistor (VMT);
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282740
