Title :
Operation of RF Power MOSFETs under Proton Radiation
Author :
Jiang, Ningyue ; Ma, Zhenqiang ; Li, Larry B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI
Abstract :
The effects of proton radiation on the RF power performance of multi-finger RF MOSFETs are, for the first time, reported in this work. Besides DC and small-signal AC characterizations, on-wafer large-signal high-power performance characteristics were also measured for multi-finger RF n-MOSFETs. The comparison between pre- and post-radiation shows that the power performance of RF MOSFETs exhibits excellent tolerance to high-fluence proton irradiation, revealing the potential of RF MOSFETs in the applications of power amplifiers for wireless application under severe radiation environment even without any intentional radiation hardening
Keywords :
power MOSFET; proton effects; radiation hardening (electronics); DC characterization; RF power MOSFET; multifinger RF MOSFET; on-wafer large-signal high-power performance characteristics; power amplifiers; proton radiation; radiation hardening; small-signal AC characterizations; wireless application; Cutoff frequency; Degradation; Leakage current; MOSFET circuits; Microwave devices; Performance analysis; Performance evaluation; Protons; Radio frequency; Scattering parameters; Large-signal; MOSFETs; RF; load-pull; proton; radiation;
Conference_Titel :
European Microwave Integrated Circuits Conference, 2006. The 1st
Conference_Location :
Manchester
Print_ISBN :
2-9600551-8-7
DOI :
10.1109/EMICC.2006.282746
