Solid state reactions and barrier properties of the thin films Ti-W on the silicon

Author

Makogon, Yu.N. ; Maximovich, L.P. ; Sidorenko, S.I.

Author_Institution

Dept. of Metal Phys., Nat. Tech. Univ., Kiev, Ukraine

fYear

1997

fDate

16-19 March 1997

Firstpage

198

Abstract

Ti-W and Al-Ti-W thin films on the single crystal silicon phase formation process were investigated by physical metallography methods in the process of the pulse heat treatment and vacuum annealing. Ti-W alloy films (150 nm thickness) were obtained by 50 at.%Ti+50 at.%W target magnetron sputtering. Aluminium film (100 nm thickness) was deposited on the such a way obtained Ti-W film. It was established that the Ti-W films of 150 nm thickness is the effective barrier for preventing aluminium and silicon interdiffusion in the temperature range 573-773 K for the Al-Ti-W-Si system.

Keywords

annealing; chemical interdiffusion; diffusion barriers; metallic thin films; sputtered coatings; titanium alloys; tungsten alloys; 573 to 773 K; Al-TiW-Si; Ti-W alloy thin film; TiW-Si; aluminium thin film; barrier properties; interdiffusion; magnetron sputtering; metallography; phase formation; pulse heat treatment; single crystal silicon substrate; solid state reaction; vacuum annealing; Aluminum; Annealing; Heat treatment; Semiconductor films; Semiconductor thin films; Silicon; Solid state circuits; Sputtering; Temperature distribution; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Materials for Advanced Metallization, 1997. MAM '97 Abstracts Booklet., European Workshop

Conference_Location

Villard de Lans, France

ISSN

1266-0167

Type

conf

DOI

10.1109/MAM.1997.621119

Filename

621119